SUD50N02-09P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 _ C UNLESS NOTED)
60
Transconductance
T C = ? 55 _ C
0.030
On-Resistance vs. Drain Current
50
40
30
20
10
0
25 _ C
125 _ C
0.025
0.020
0.015
0.010
0.005
0.000
V GS = 4.5 V
V GS = 10 V
0
10
20
30
40
50
0
20
40
60
80
100
I D ? Drain Current (A)
I D ? Drain Current (A)
2000
1600
Capacitance
10
8
V DS = 10 V
I D = 50 A
Gate Charge
C iss
1200
800
400
0
C rss
C oss
6
4
2
0
0
4
8
12
16
20
0
4
8
12
16
20
V DS ? Drain-to-Source Voltage (V)
Q g ? Total Gate Charge (nC)
1.8
1.6
On-Resistance vs. Junction Temperature
V GS = 10 V
I D = 30 A
100
Source-Drain Diode Forward Voltage
1.4
1.2
10
T J = 150 _ C
T J = 25 _ C
1.0
0.8
0.6
? 50
? 25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
1.5
T J ? Junction Temperature ( _ C)
Document Number: 72034
S-41168—Rev. C, 14-Jun-04
V SD ? Source-to-Drain Voltage (V)
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